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| GATE CONTROLLED DEVICE - Insulated Gate Bi-polar Transistor - Capsule Type PDF Data Sheet Available VCES New Part Number (V) T0400NA18A T1400TA18A 1800 1800 (V) +/- 20 +/- 20 VGES IC Old Part Number (Note 2) (A) 400 1400 ICRM (Note 2) (A) 800 2800 IF (A) 400 1400 IFRM (A) 800 2800 PMAX (W) 1800 6600 Tj (Note 3) ( C) -60 to +150 -60 to +150 o Tstg ( C) -60 to +150 -60 to +150 o Rth(j-hs) (IGBT) Double (K/kW) 55 15 Collector (K/kW) 90 25 Emitter (K/kW) 140 39 Double (K/kW) 84 35 Rth(j-hs) (Diode) Cathode (K/kW) 138 52 Anode (K/kW) 218 104 Wt (Typ) (g) 50 120 Mounting Force (kN) 8.0 - 12.0 20.0 - 30.0 Outine No. (Note 4) n/a n/a WTC40AAC18 WTC140AAC18 Note 1 Note 2 Note 3 Note 4 Y Y The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Limited. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Unless otherwise indicated, Tj = 125oC TC = 90oC For operation below -40oC or above +125oC, please contact the Factory. Please refer to data sheets for outline drawings |
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